Intel and Micron Ready To Begin Mass-Production of 34 nm Flash

Intel and Micron said they are ready to begin mass-production of 34 nm, 32 Gb (4 GB) multi-level cell (MLC) NAND flash memory device in what is believed to be the most advanced flash production process available today. The two companies believe that more than 50% of flash production at their Lehi facility will have transitioned to 34 nm flash by the end of the year.

The chips can store 4 GB of data - enough for 1000 4 MB MP3 music tracks – on an area of 172mm², which less than the size of an average thumbnail. The two companies said that the chip will “enable high-density solid-state storage in small form factor applications including digital cameras, personal music players and digital camcorders” and “more cost-effective solid-state drives, dramatically increasing their current storage capacity.”

According to a press release, 34 nm MLC and SLC samples will be available from Intel and Micron in early 2009.